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中国自主DUV光刻机启动量产,长鑫存储或成为首批应用客户

BlockBeats 消息,7 月 27 日,据 The Information 援引知情人士消息,一家获中国国有资本支持的企业已开始量产自主研发的 DUV(深紫外)光刻机制造设备,这是中国半导体产业推进国产化替代的重要进展。 据悉,该企业计划于 2026 年生产约 5 台 DUV 光刻机,并在 2027 年扩大至约 20 台。虽然与荷兰光刻机巨头 ASML 的产能仍存在差距(ASML 去年交付 131 套浸没式 DUV 光刻系统),但国产 DUV 设备突破量产意味着中国芯片制造供应链进一步向自主可控迈进。 消息人士称,这批国产 DUV 光刻机计划交付给中国主要芯片制造商,包括中芯国际、华虹半导体以及存储芯片厂商长鑫存储。 其中,长鑫存储作为中国 DRAM 产业代表企业,预计将成为国产先进半导体制造设备的重要应用方。若国产 DUV 设备能够在长鑫存储等厂商产线中实现稳定运行,将进一步降低中国存储芯片产业对海外关键设备的依赖。
Disclaimer: The views above are the author's only and do not represent 711BTC. Nothing here constitutes investment advice.

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07-06 15:01Important

Institutions: Comprehensive upward revision of Q1 DRAM and NAND Flash price growth forecasts for all products.

According to BlockBeats' latest memory industry survey, released on July 6th, demand from AI and data centers will continue to exacerbate the global memory supply-demand imbalance in the first quarter of 2026, further increasing manufacturers' bargaining power. Based on this, TrendForce has comprehensively revised upwards its Q1 price growth forecasts for all DRAM and NAND Flash products. It predicts that the overall Conventional DRAM contract price will increase by 90-95% from the 55-60% increase announced in early January, while the NAND Flash contract price will be revised upwards from 33-38% to 55-60%, with further upward revisions not ruled out. Click the original link below to join the Beating · Lark AI news channel for 24/7 monitoring of global AI hot topics and news.

07-06 10:23Important

DRAM weakened, and the memory supply chain continued its correction, rebounding intraday before coming under pressure again.

According to BlockBeats, on July 6th, based on BIT (bit.com) market data, the DRAM chip memory ETF rose and then fell back today, weakening again. The current price is around 64.5, with a daily decline of 1.3%. Overall, it shows a high-level oscillating downward structure, with insufficient rebound momentum. The trading volume increased in stages during the decline, indicating that selling pressure is still being released.

07-05 17:08

Citrini Analyst: China's CXMT tests pilot production line for bonding DRAM; South Korean media claims its technology and development speed may be ahead of its South Korean rivals.

According to a Odaily by Citrini analyst Jukan on the X platform, South Korean media reports that China's CXMT is currently testing a bonded DRAM pilot production line in Hefei, aiming to achieve high-performance DRAM without using EUV lithography. Bonded DRAM is a technology that manufactures the memory cell array and peripheral circuitry on separate wafers and then bonds them together. This method can produce ultra-high-density DRAM using only multi-patterned deep ultraviolet (DUV) lithography, without requiring EUV equipment. Samsung Electronics is developing its own bonded DRAM under Project B1b, and SK hynix is ​​also advancing similar technology. South Korean media warns that assessments suggest CXMT may currently be ahead of its South Korean competitors in terms of both the technology itself and the speed of its development.

07-04 17:24Important

Trendforce: Traditional DRAM prices are expected to rise by 13% to 18% in Q3.

According to BlockBeats, on July 4th, Trendforce predicts that contract prices for traditional DRAM products will increase by 13% to 18% quarter-over-quarter in the third quarter of 2026.

07-03 13:33Important

TrendForce: The DRAM market will continue to face severe supply shortages in Q3.

According to BlockBeats, on July 3rd, TrendForce, a high-tech industry research firm, released its latest memory price survey, predicting that the DRAM market will continue to face a severe and widespread supply shortage in the third quarter of 2026. Despite this, slowing consumer application demand and a high base effect will slightly moderate the rate of increase, with DRAM contract prices expected to rise by +13% to 18% quarter-over-quarter. For NAND Flash, TrendForce believes that AI inference demand and large-scale data center construction will continue to drive most of the demand. However, with contract prices already at historical highs and slowing consumer market demand, customers' ability to absorb further price increases has reached its limit. Therefore, TrendForce predicts that NAND Flash contract prices will rise by +10% to 15% quarter-over-quarter, a significantly smaller increase than in previous quarters.

06-27 10:32

The DRAM ETF has included GigaDevice in its holdings, with a weighting of 2.91%.

According to Odaily available information, the Roundhill Memory ETF (DRAM) has added GigaDevice to its portfolio with a weighting of 2.91%. Jukan, an analyst at Citrini Research, stated that GigaDevice is considered the parent company or affiliated entity of Changxin Memory Technologies, a Chinese DRAM manufacturer. The Roundhill Memory ETF primarily focuses on the global memory chip industry chain, with core holdings including major global memory chip companies such as Samsung Electronics, Micron Technology, and SK Hynix.