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三星证券:中国DUV进展对本轮AI芯片周期影响有限,美股半导体股抛售反应过度

BlockBeats 消息,7 月 28 日,三星证券半导体及 IT 分析师 Lee Jong-wook 发布报告称,多家媒体 7 月 27 日报道,中国一家国家支持企业的浸没式 DUV 光刻设备可能进入量产阶段,计划面向中芯国际和长鑫存储于 2026 年生产 5 台、2027 年生产 20 台,但目前仍需验证量产能力。作为对比,ASML 2025 年共出货 131 台浸没式 DUV 设备,主要用于生产 7nm、14nm 及 28nm 芯片。 报告称,该进展并非全新消息。2025 年已有消息称,上海一家与华为有关联的企业正在研发 193nm 浸没式 DUV,本次量产项目也被认为由同一开发团队主导。其意义在于,这是中国首次实现浸没式平台国产化;暂不考虑性能差距,相当于掌握了 ASML 约 2008 年的技术水平,对 ASML 等全球设备企业构成负面影响。 中国半导体对本轮 AI 芯片周期的影响有限,因为本轮周期的核心仍是美国超大规模云服务商与英伟达的数据中心生态。AI 芯片和服务器 DRAM 并非同质化商品,质量与现场故障率会直接影响总拥有成本,产品验证也需要较长时间;叠加地缘政治风险,中国 AI 芯片和 DRAM 短期内难以进入美国数据中心生态。 中国 DUV 消息从设备股扩散至美国半导体股下跌,属于「尾巴摇动身体」的典型现象,更多反映当前半导体板块情绪脆弱。中国因素影响的是下一轮周期低点的深度,而非本轮周期何时见顶,且已较大程度反映在三大存储厂商约 5 倍的市盈率中。当前真正需要观察的是,是否出现能够证明本轮 AI 数据中心投资已经见顶的证据。
Disclaimer: The views above are the author's only and do not represent 711BTC. Nothing here constitutes investment advice.

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Tom Lee: US stocks are expected to strengthen in July, with the S&P 500 potentially reaching 8,000 points this year.

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Institutions: Comprehensive upward revision of Q1 DRAM and NAND Flash price growth forecasts for all products.

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07-06 10:23Important

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Citrini Analyst: China's CXMT tests pilot production line for bonding DRAM; South Korean media claims its technology and development speed may be ahead of its South Korean rivals.

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Trendforce: Traditional DRAM prices are expected to rise by 13% to 18% in Q3.

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