SK Hynix will complete its NAND flash memory factory in Cheongju in 2029.
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SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory.
Odaily Odaily reports that SK hynix CEO Kwak Noh-jung announced at a national report meeting on the vision for advanced industry development in the Chungcheong region on July 2nd that SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory and advanced packaging facilities. Specifically, SK hynix will invest 80 trillion won in its M17 NAND flash memory factory and 20 trillion won in its P&T7 advanced packaging factory. Construction on M17 is scheduled to begin next year, with a target of production in the first half of 2029; P&T7 is planned for completion by the end of 2027.
Kioxia and SanDisk begin production of 10th generation 3D NAND flash memory products at their Fab 2 factory in Beishang.
According to Odaily Odaily, Kioxia and SanDisk have begun producing 10th generation 3D NAND flash memory products at their Fab2 plant in northern Japan.
Kioxia-SanDisk BiCS10 (332-layer) 3D NAND flash memory enters sampling stage.
Mars Finance reports that the Kioxia-SanDisk alliance has announced the commencement of sample shipments for its jointly developed 10th generation BiCS FLASH 3D NAND flash memory, with the first product being a 1Tb TLC. The BiCS10 employs a 332-layer stacked design and is manufactured at Kioxia's Kitakami Fab 2 in Iwate, Japan. It continues the two major new technologies introduced in the BiCS8 era: CMOS Direct Bonding to Array (CBA) and Pitch Gating (OPS). (Cailian Press)
Micron Technology is investing $9.3 billion to expand its advanced memory chip project, with HBM expected to ship in the second half of 2028.
PANews reported on July 5th that Micron Technology officially launched the expansion project of its Hiroshima plant in western Japan on Saturday (July 4th). This project, with a total investment of 1.5 trillion yen (approximately US$9.3 billion), aims to produce advanced memory chips, including high-bandwidth memory (HBM), to meet the booming demand driven by the artificial intelligence wave. HBM is a key component of Nvidia's AI processors, and the plant is expected to begin shipping around the summer of 2028. Recently, Micron, Samsung Electronics, and SK Hynix have all announced plans to expand their manufacturing capabilities. Earlier this week, SK Hynix announced plans to invest 80 trillion won (approximately US$51.46 billion) to build a new NAND memory chip factory in Cheongju, the capital of North Chungcheong Province, South Korea.
Kioxia has begun shipping 1TB three-cell storage samples of its 10th generation BiCS FLASH 3D NAND flash memory.
According to BlockBeats, on July 3, Japanese storage company Kioxia began shipping samples of its 1TB three-level cell storage device using its 10th generation BiCS FLASH 3D flash memory technology.
ADATA: Memory prices will rise by 20%-30% in Q3, and flash memory prices will rise by 35%-40%.
Mars Finance reports that ADATA Technology has warned of another price increase for DRAM and NAND flash memory in the third quarter of 2026, further driving up the prices of memory and storage products. ADATA Chairman Chen Libai stated that major memory manufacturers have already announced that DRAM contract prices will continue to rise by 20% to 30% in the third quarter of 2026, while NAND flash memory prices will increase by 35% to 40%. The continued rise in prices for both types of memory chips is expected to continue to drive the company's operating performance growth. (Cailian Press)