Kioxia-SanDisk BiCS10 (332-layer) 3D NAND flash memory enters sampling stage.
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Kioxia and SanDisk begin production of 10th generation 3D NAND flash memory products at their Fab 2 factory in Beishang.
According to Odaily Odaily, Kioxia and SanDisk have begun producing 10th generation 3D NAND flash memory products at their Fab2 plant in northern Japan.
Kioxia has begun shipping 1TB three-cell storage samples of its 10th generation BiCS FLASH 3D NAND flash memory.
According to BlockBeats, on July 3, Japanese storage company Kioxia began shipping samples of its 1TB three-level cell storage device using its 10th generation BiCS FLASH 3D flash memory technology.
Kioxia has provided customers with samples of its next-generation flash memory chips, striving to stay ahead of the competition.
BlockBeats reported on July 4th, citing Bloomberg, that Kioxia Holdings has begun sampling its next-generation flash memory chips to AI data center operators, hoping to gain a competitive edge in this lucrative market. The Tokyo-based chipmaker stated that its latest high-density 3D flash memory chip offers improvements in both energy efficiency and data transfer speeds. The company claims that the new generation of 332-layer, 10th-generation flash memory chips offers 59% more storage capacity than its previous flagship product, the 8th-generation flash memory chip. Click the original link below to join the Beating · Lark AI news channel and monitor global AI hotspots and news 24/7.
SK Hynix will complete its NAND flash memory factory in Cheongju in 2029.
SK Hynix will build a large-scale NAND flash memory wafer fab in Cheongju, South Chungcheong Province, with a target of operation in 2029. Including this project, the SK Group plans to invest a total of 170 trillion won in the Chungcheong region, covering advanced packaging and artificial intelligence data centers, aiming to create a global AI hub. (Sina Finance)
The Nikkei 225 index fell 1.23% in early trading, while storage stock Kioxia plunged 10.75%.
According to Mars Finance, on July 3rd, the Nikkei 225 index fell 1.23% in early trading, and storage stock Kioxia plummeted 10.75%. Kioxia announced today that it has begun shipping samples of 1TB three-level cell storage devices using its tenth-generation BiCS FLASH 3D NAND technology. Kioxia Holdings (formerly Toshiba's storage division) has long collaborated with SanDisk to develop BiCS FLASH 3D NAND technology. Since the prototype was released in 2007, it has iterated to the tenth generation, focusing on increasing the number of vertical stacking layers, optimizing bit density, and balancing energy efficiency to meet the explosive demand for high-capacity, high-performance storage from AI, data centers, and enterprise SSDs.
SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory.
Odaily Odaily reports that SK hynix CEO Kwak Noh-jung announced at a national report meeting on the vision for advanced industry development in the Chungcheong region on July 2nd that SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory and advanced packaging facilities. Specifically, SK hynix will invest 80 trillion won in its M17 NAND flash memory factory and 20 trillion won in its P&T7 advanced packaging factory. Construction on M17 is scheduled to begin next year, with a target of production in the first half of 2029; P&T7 is planned for completion by the end of 2027.