Kioxia and SanDisk begin production of 10th generation 3D NAND flash memory products at their Fab 2 factory in Beishang.
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Kioxia-SanDisk BiCS10 (332-layer) 3D NAND flash memory enters sampling stage.
Mars Finance reports that the Kioxia-SanDisk alliance has announced the commencement of sample shipments for its jointly developed 10th generation BiCS FLASH 3D NAND flash memory, with the first product being a 1Tb TLC. The BiCS10 employs a 332-layer stacked design and is manufactured at Kioxia's Kitakami Fab 2 in Iwate, Japan. It continues the two major new technologies introduced in the BiCS8 era: CMOS Direct Bonding to Array (CBA) and Pitch Gating (OPS). (Cailian Press)
Kioxia has begun shipping 1TB three-cell storage samples of its 10th generation BiCS FLASH 3D NAND flash memory.
According to BlockBeats, on July 3, Japanese storage company Kioxia began shipping samples of its 1TB three-level cell storage device using its 10th generation BiCS FLASH 3D flash memory technology.
Kioxia has provided customers with samples of its next-generation flash memory chips, striving to stay ahead of the competition.
BlockBeats reported on July 4th, citing Bloomberg, that Kioxia Holdings has begun sampling its next-generation flash memory chips to AI data center operators, hoping to gain a competitive edge in this lucrative market. The Tokyo-based chipmaker stated that its latest high-density 3D flash memory chip offers improvements in both energy efficiency and data transfer speeds. The company claims that the new generation of 332-layer, 10th-generation flash memory chips offers 59% more storage capacity than its previous flagship product, the 8th-generation flash memory chip. Click the original link below to join the Beating · Lark AI news channel and monitor global AI hotspots and news 24/7.
Samsung begins mass production of next-generation enterprise-grade SSDs for Nvidia Vera Rubin.
According to BlockBeats, on July 8th, Samsung Electronics began mass production of its most advanced data center storage hard drive, which will be used in NVIDIA's upcoming Vera Rubin platform. This enterprise-class solid-state drive, named PM1763, was first announced earlier this year at NVIDIA's GTC conference. Samsung also showcased its next-generation high-bandwidth memory (HBM4) and low-power SOCAMM2 modules at the time, as part of a comprehensive solution for AI data centers. Samsung stated on Wednesday that the PM1763 features the company's latest V-NAND flash memory chips and a newly developed 4nm controller, offering more than double the read and write speeds of its predecessor. The PM1763 is designed to reduce data latency for advanced processors and AI accelerators. To maintain high-speed performance during AI training and inference, the drive employs a liquid-cooling design.
SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory.
Odaily Odaily reports that SK hynix CEO Kwak Noh-jung announced at a national report meeting on the vision for advanced industry development in the Chungcheong region on July 2nd that SK hynix plans to invest 100 trillion won in Cheongju to expand its NAND flash memory factory and advanced packaging facilities. Specifically, SK hynix will invest 80 trillion won in its M17 NAND flash memory factory and 20 trillion won in its P&T7 advanced packaging factory. Construction on M17 is scheduled to begin next year, with a target of production in the first half of 2029; P&T7 is planned for completion by the end of 2027.
SK Hynix will complete its NAND flash memory factory in Cheongju in 2029.
SK Hynix will build a large-scale NAND flash memory wafer fab in Cheongju, South Chungcheong Province, with a target of operation in 2029. Including this project, the SK Group plans to invest a total of 170 trillion won in the Chungcheong region, covering advanced packaging and artificial intelligence data centers, aiming to create a global AI hub. (Sina Finance)