Kioxia has provided customers with samples of its next-generation flash memory chips, striving to stay ahead of the competition.
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Kioxia has begun shipping 1TB three-cell storage samples of its 10th generation BiCS FLASH 3D NAND flash memory.
According to BlockBeats, on July 3, Japanese storage company Kioxia began shipping samples of its 1TB three-level cell storage device using its 10th generation BiCS FLASH 3D flash memory technology.
Kioxia and SanDisk begin production of 10th generation 3D NAND flash memory products at their Fab 2 factory in Beishang.
According to Odaily Odaily, Kioxia and SanDisk have begun producing 10th generation 3D NAND flash memory products at their Fab2 plant in northern Japan.
Kioxia-SanDisk BiCS10 (332-layer) 3D NAND flash memory enters sampling stage.
Mars Finance reports that the Kioxia-SanDisk alliance has announced the commencement of sample shipments for its jointly developed 10th generation BiCS FLASH 3D NAND flash memory, with the first product being a 1Tb TLC. The BiCS10 employs a 332-layer stacked design and is manufactured at Kioxia's Kitakami Fab 2 in Iwate, Japan. It continues the two major new technologies introduced in the BiCS8 era: CMOS Direct Bonding to Array (CBA) and Pitch Gating (OPS). (Cailian Press)
Samsung begins mass production of next-generation enterprise-grade SSDs for Nvidia Vera Rubin.
According to BlockBeats, on July 8th, Samsung Electronics began mass production of its most advanced data center storage hard drive, which will be used in NVIDIA's upcoming Vera Rubin platform. This enterprise-class solid-state drive, named PM1763, was first announced earlier this year at NVIDIA's GTC conference. Samsung also showcased its next-generation high-bandwidth memory (HBM4) and low-power SOCAMM2 modules at the time, as part of a comprehensive solution for AI data centers. Samsung stated on Wednesday that the PM1763 features the company's latest V-NAND flash memory chips and a newly developed 4nm controller, offering more than double the read and write speeds of its predecessor. The PM1763 is designed to reduce data latency for advanced processors and AI accelerators. To maintain high-speed performance during AI training and inference, the drive employs a liquid-cooling design.
Samsung's HBM4E yield has exceeded 70%, and its next-generation DRAM process, D1d, aims to receive production readiness approval in November.
According to Mars Finance, on July 1st, following the world's first mass production of HBM4 (6th generation), Samsung Electronics is making progress in the development of HBM4E (7th generation) and next-generation DRAM. Song Jae-hyuk, CTO of Samsung Electronics' DS division and head of its Semiconductor Research Institute, stated at an internal business status briefing on June 30th that the HBM4E reliability testing yield has improved to over 70%. The industry generally considers a yield exceeding 80% to be a stable, "mature yield" stage; considering that HBM4E is still in the reliability testing phase, a yield above 70% is considered an indicator that development is entering a stable range. Samsung Electronics began mass production and shipping of HBM4 in February of this year, and on May 29th, it publicly released detailed technical specifications for its 12-layer HBM4E product, shipping samples to major customers. HBM4 will be used in Nvidia's Vera Rubin AI accelerator, to be launched in the second half of the year, while HBM4E is expected to be used in Nvidia's next-generation AI accelerator, Vera Rubin Ultra, to be launched next year. Samsung's next-generation DRAM process development is also progressing smoothly. Song Jae-hyuk believes that the D1d process technology has a competitive advantage over its rivals and is being developed with the goal of obtaining production readiness approval in November. D1d is Samsung's core DRAM process planned for use starting with the next-generation HBM5 (8th generation). If it progresses as planned, it will have a positive impact on the competitiveness of next-generation DRAM and subsequent HBM5 products. (Fnnews)
South Korean media: Samsung Electronics and SK Hynix may delay the introduction of next-generation HBM hybrid bonding technology.
According to Odaily Odaily, citing South Korean media reports, Samsung Electronics and SK Hynix are reassessing the timeline for adopting hybrid bonding technology in next-generation high-bandwidth memory (HBM). Due to a decrease in the demand for thickness reduction and improved heat dissipation performance in HBM, the market anticipates that the adoption of this technology may be further delayed than previously expected. Meanwhile, both companies are developing new heat dissipation solutions such as HPB and iHBM, respectively, and plan to apply them to HBM5 products. However, industry insiders believe that as the number of HBM I/Os continues to increase in the future, hybrid bonding will remain an important technology route in the medium to long term.